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How do Microchip mSiC modules power AI data centers?

How do Microchip mSiC modules power AI data centers?

Microchip launched new silicon carbide modules to deliver thermal performance and efficiency for SSTs.

On May 26, 2026, Arizona-based semiconductor company Microchip Technology, introduced a new family of 3.3 kV HV-D3 mSiC power modules aimed at solid-state transformer (SST) deployments in AI hyperscale data centers and other high-voltage systems.

“New silicon carbide modules deliver the required thermal performance and efficiency for SSTs to increase power available for token generation,” Microchip Technology stated.

According to the company, the new modules integrate 3.3 kV silicon carbide (SiC) mSiC® MOSFETs and Schottky diodes in an industry‑standard 62 mm package, enabling efficient power delivery from the medium‑voltage grid directly to the server rack.

The move follows wider industry efforts to redesign AI infrastructure around power efficiency and grid limitations, including growing interest in distributed AI deployment models and alternative energy architectures. Similar pressures are already reshaping where hyperscale facilities are being built and how operators approach long-term electricity access

What the new module delivers

Microchip said the HV-D3 platform supports 6 kV isolation and uses silicon nitride substrates to improve thermal handling and durability in high-voltage environments. The company added that the modules are designed to support higher power density systems without requiring equally aggressive cooling expansion.

“As AI data centers continue to push limits in supplying power from the grid to the GPU, the need for solid-state transformers becomes increasingly important,” said Clayton Pillion, vice president of Microchip’s high-power solutions business unit.

Pillion also stated that the company’s 3.3 kV HV-D3 mSiC power modules enable designers to reduce the number of series-connected devices by roughly half compared to lower-voltage SiC alternatives when interfacing to 13.8 kV or 34.5 kV grids. The devices bridge the gap in the industrial market for 100–300A products, fitting right between discrete SiC devices and much larger power modules.

The products are available in half-bridge and common-source configurations across the 100A to 300A range. According to Microchip, the modules are intended for both hard-switched and soft-switched topologies commonly used in high-frequency power conversion systems.

Beyond AI data centers, Microchip said the modules are also intended for megawatt-scale EV charging infrastructure, rail transportation systems, industrial motor drives, and defense power applications.

Key Takeaways

  • Microchip launched new 3.3 kV mSiC power modules for AI data center solid-state transformers.
  • The modules enhance thermal performance and efficiency for AI token generation.
  • Integrated SiC MOSFETs and diodes enable direct power delivery from grid to server rack.
  • New design supports higher power density systems without aggressive cooling expansion.
  • Microchip's modules reduce the number of series-connected devices needed for designers.